111BF9090
محصول جدید
ماسفت دوال گیت N کانال
BF909AWR N-channel dual gate MOS-FETs
Manufacture Part Number: BF909
PARS Part Number: 111BF9090
Package: SOT143R
Manufacture Company: NXP Semiconductors
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FEATURES
· Specially designed for use at 5 V supply voltage
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.
APPLICATIONS
· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.