SHF-0289 Transistor

Description

Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 7V,200mA. The +43 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems.

Features

• High Linearity Performance at 1.96 GHz
+30 dBm P1dB
+43 dBm OIP3
+23.7 dBm IS-95 Channel Power
+14.6 dB Gain
• +21.7 dBm W-CDMA Channel Power
• High Drain Efficiency (>50% at P1dB)
• See App Note AN-032 for circuit details

Applications

• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems