BFP490 TRANSISTOR

NPN Silicon RF Transistor

For high power amplifiers
Compression point P-1dB = 26.5 dBm at 1.8 GHz
maxim. available Gain Gma = 8.5 dB at 1.8 GHz
Transition frequency fT > 17 GHz
Gold metallization for high reliability
SIEGET 25 GHz fT - Line

Package Equivalent Circuit:

The SCT-595 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes