2SC3356 Transistor

DESCRIPTION

The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.

FEATURES

• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Collector to Base Voltage               VCBO         20 V
Collector to Emitter Voltage          VCEO         12 V
Emitter to Base Voltage                 VEBO          3.0 V
Collector Current                            IC               100 mA
Total Power Dissipation                 PT               200 mW
Junction Temperature                    Tj               150 C
Storage Temperature                    Tstg            65 to +150 C