111BF7100
محصول جدید
ترانزیستور ان پی ان آر اف فرکانس بالا تا 43 گیگا هرتز
NPN wideband silicon germanium RF transistor for high speed, low noise applications.
Manufacture Part Number: bfu710f
PARS Part Number: 111BF7100
Package: plastic, 4-pin dual-emitter SOT343F package
Manufacture Company: NXP
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FEATURES
- Low noise high gain microwave transistor
- Noise figure (NF) = 1.45 dB at 12 GHz
- High maximum power gain 14 dB at 12 GHz
- 110 GHz fT silicon germanium technology
APPLICATIONS
-2nd LNA stage and mixer stage in DBS LNB’s
-Low noise amplifiers for microwave communications systems -
-Ka band oscillators DRO’s
-Low current battery equipped applications
-Microwave driver / buffer applications
-GPS
-RKE
-AMR
-ZigBee
-FM radio
-Mobile TV
-Bluetooth