bfu710f Transistor

111BF7100

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ترانزیستور ان پی ان آر اف فرکانس بالا تا 43 گیگا هرتز

NPN wideband silicon germanium RF transistor for high speed, low noise applications.

Manufacture Part Number: bfu710f

PARS Part Number: 111BF7100

Package: plastic, 4-pin dual-emitter SOT343F package

Manufacture Company: NXP

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FEATURES

- Low noise high gain microwave transistor

- Noise figure (NF) = 1.45 dB at 12 GHz 

- High maximum power gain 14 dB at 12 GHz 

- 110 GHz fT silicon germanium technology

APPLICATIONS

-2nd LNA stage and mixer stage in DBS LNB’s

-Low noise amplifiers for microwave communications systems -

-Ka band oscillators DRO’s

-Low current battery equipped applications

-Microwave driver / buffer applications

-GPS

-RKE

-AMR

-ZigBee

-FM radio

-Mobile TV

-Bluetooth

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bfu710f Transistor

bfu710f Transistor

ترانزیستور ان پی ان آر اف فرکانس بالا تا 43 گیگا هرتز

NPN wideband silicon germanium RF transistor for high speed, low noise applications.

Manufacture Part Number: bfu710f

PARS Part Number: 111BF7100

Package: plastic, 4-pin dual-emitter SOT343F package

Manufacture Company: NXP

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