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2SC3355 Transistor
111S33550
محصول جدید
ترانزیستور NPN فرکانس بالا مناسب برای تقویت کننده های آر اف محصول شرکت NEC ژاپن
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Manufacture Part Number: 2SC3355
PARS Part Number: 111S33550
Package: TO-92A
Manufacture Company: NEC
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DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 C
Storage Temperature Tstg 65 to +150 C
