SHF-0589 Transistor

Description

Stanford Microdevices’ SHF-0186 is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface-mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency. These HFETs are an ideal choice as output stages of subscriber products or as drivers for higher power applications. Its high output third order intercept point of +38 dBm makes it suitable for use in high dynamic range requirements. These devices have 0.5 micron gate lengths with a total gate periphery of 1200 microns. These transistors have proven gold based metallization and nitride passivation.

Features

• AIGaAs/GaAs Heterostructure FET Technology

• High Power Added Efficiency

• High Associated Gain : 16 dB Typical at 2 GHz

• Low Cost Surface Mount Plastic Package

• Available in Tape and Reel Format

Applications

• Subscriber Products

• Driver for High Power Applications