111LQ8010
محصول جدید
ترانزیستور LDMOS فرکانس بالا (آر اف) 30 وات
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Manufacture Part Number: LQ801
PARS Part Number: 111LQ8010
Package: AQ
Manufacture Company: polyfet rf devices
اخطار: آخرین موجودی فعلی!
تاریخ در دسترس بودن
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances, resulting in high F transistors with high input impedance and high efficiency.
30.0 Watts Push-Pull
High efficiency, linear high gain, low noise