BF909 Transistor

111BF9090

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ماسفت دوال گیت N کانال

BF909AWR N-channel dual gate MOS-FETs

Manufacture Part Number: BF909 

PARS Part Number: 111BF9090

Package: SOT143R 

Manufacture Company: NXP Semiconductors

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FEATURES

· Specially designed for use at 5 V supply voltage
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.

APPLICATIONS

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

DESCRIPTION

Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

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BF909 Transistor

BF909 Transistor

ماسفت دوال گیت N کانال

BF909AWR N-channel dual gate MOS-FETs

Manufacture Part Number: BF909 

PARS Part Number: 111BF9090

Package: SOT143R 

Manufacture Company: NXP Semiconductors

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