SKM200GB124D IGBT

Features

• MOS input (voltage controlled)
• N channel, homogeneous Silicon
structure NPT-IGBT (Non punch
through)
• Low saturation voltage
• Low inductance case
• Low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
• Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications

• Switching (not for linear use)
• Inverter drives
• UPS